IPP03N03LB G
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP03N03LB-G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 80A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 3.1mOhm at 55A and 10V (Vgs) ensures minimal conduction losses. Key parameters include a gate charge of 59 nC (max) at 5V (Vgs) and an input capacitance (Ciss) of 7624 pF (max) at 15V (Vds). The device operates across a temperature range of -55°C to 175°C (TJ). It is housed in a PG-TO220-3-1 package for through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7624 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
