IPP037N08N3GHKSA1
MOSFET N-CH 80V 100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP037N08N3GHKSA1 is an N-Channel Power MOSFET designed for high-performance power applications. This component offers a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 100A at 25°C, with a maximum power dissipation of 214W at the same temperature. The optimized Rds(on) is a mere 3.75mOhm at 100A and 10V gate drive, ensuring minimal conduction losses. Key parameters include a gate charge (Qg) of 117 nC at 10V and input capacitance (Ciss) of 8110 pF at 40V. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3.5V at 155µA. The TO-220-3 package facilitates through-hole mounting and operates across an extended temperature range of -55°C to 175°C. This MOSFET finds application in sectors such as automotive, industrial power supplies, and server power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.75mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 40 V |
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