IPP037N06L3GXKSA1
MOSFET N-CH 60V 90A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP037N06L3GXKSA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The low on-resistance of 3.7mOhm at 90A and 10V gate-source voltage, coupled with a maximum power dissipation of 167W (Tc), makes it suitable for high-efficiency power conversion. It utilizes advanced MOSFET technology and is packaged in a standard PG-TO220-3 through-hole configuration. Key characteristics include a gate charge of 79 nC at 4.5V and an input capacitance of 13000 pF at 30V. This component is commonly employed in automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 93µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
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