IPP034N03LGHKSA1
MOSFET N-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP034N03LGHKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 94W. The low on-resistance (Rds On) of 3.4mOhm at 30A and 10V, coupled with a gate charge (Qg) of 25 nC at 4.5V, ensures efficient switching performance. It supports a drive voltage range from 4.5V to 10V and has a gate-source voltage (Vgs) tolerance of ±20V. The threshold voltage (Vgs(th)) is 2.2V maximum. With a wide operating temperature range of -55°C to 175°C, this MOSFET is suitable for use in automotive, industrial power supplies, and motor control systems. The device is packaged in a PG-TO220-3-1 configuration for through-hole mounting and is supplied in tubes.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 15 V |
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