IPP033N04NF2SAKMA1
TRENCH PG-TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™2 N-Channel MOSFET, part number IPP033N04NF2SAKMA1, features a 40 V drain-to-source voltage and a continuous drain current of 25 A at 25°C ambient and 113 A at 25°C case temperature. This device exhibits a low on-resistance of 3.3 mOhm maximum at 70 A and 10 V Vgs. The MOSFET utilizes TRENCH technology and is housed in a PG-TO220-3 package suitable for through-hole mounting. Key parameters include a gate charge of 68 nC maximum at 10 V Vgs and input capacitance of 3200 pF maximum at 20 V Vds. Power dissipation is rated at 3.8 W (Ta) and 107 W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is commonly employed in industrial applications such as power supplies, motor control, and battery management systems.
Additional Information
Series: StrongIRFET™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 113A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 107W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 53µA |
| Supplier Device Package | PG-TO220-3-U05 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 20 V |
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