IPP032N06N3GHKSA1
MOSFET N-CH 60V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP032N06N3GHKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 120A at 25°C (Tc). The low on-resistance (Rds On) of 3.2mOhm at 100A and 10V drive voltage, coupled with a maximum power dissipation of 188W (Tc), ensures efficient power handling. Key electrical characteristics include a gate charge (Qg) of 165 nC at 10V and an input capacitance (Ciss) of 13000 pF at 30V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a standard PG-TO220-3 package for through-hole mounting. This MOSFET is suitable for use in power supply units, motor control, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 118µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
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