IPP029N06NAKSA1
MOSFET N-CH 60V 24A/100A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP029N06NAKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 60V and offers a continuous drain current (Id) of 24A at 25°C ambient temperature, scaling to 100A under continuous drain current at case temperature. With a low on-resistance (Rds(on)) of 2.9mOhm at 100A and 10V, it minimizes conduction losses. The MOSFET supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.8V at 75µA. Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 4100 pF at 30V. Power dissipation is rated at 3W (Ta) and 136W (Tc). The component is housed in a PG-TO220-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for use in automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 75µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 30 V |
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