IPP026N04NF2SAKMA1
TRENCH PG-TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number IPP026N04NF2SAKMA1, from the StrongIRFET™2 series. This TO-220-3 packaged component features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 29A at 25°C ambient, scaling to 121A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 2.6 mOhm at 70A and 10V Vgs. With a maximum power dissipation of 3.8W (ambient) and 150W (case), and a junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding power switching applications. Key electrical parameters include a gate charge (Qg) of 102 nC at 10V and input capacitance (Ciss) of 4800 pF at 20V. This component is widely utilized in automotive and industrial power management systems.
Additional Information
Series: StrongIRFET™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 121A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.4V @ 81µA |
| Supplier Device Package | PG-TO220-3-U05 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 20 V |
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