IPP024N06N3GXKSA1
MOSFET N-CH 60V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP024N06N3GXKSA1 is a 60V N-Channel power MOSFET in a PG-TO220-3 package, designed for high-efficiency power conversion applications. This component offers a continuous drain current of 120A at 25°C (Tc) and a maximum power dissipation of 250W (Tc). Featuring a low on-resistance of 2.4mOhm at 100A and 10V, it minimizes conduction losses. The device has a gate charge (Qg) of 275 nC at 10V and input capacitance (Ciss) of 23000 pF at 30V. It operates within a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) of up to ±20V. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V |
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