IPP023NE7N3G
MOSFET N-CH 75V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 3 series N-Channel Power MOSFET, part number IPP023NE7N3G, offers a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc). This through-hole component, housed in a PG-TO220-3 package, features a low on-resistance (Rds On) of 2.3mOhm at 100A and 10V. Key electrical specifications include a maximum power dissipation of 300W (Tc), a gate charge (Qg) of 206 nC at 10V, and input capacitance (Ciss) of 14400 pF at 37.5V. The device operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is suitable for demanding applications in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: OptiMOS™ 3RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 273µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 37.5 V |
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