IPP018N10N5XKSA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 N-Channel Power MOSFET, IPP018N10N5XKSA1, features a 100 V drain-source voltage and a continuous drain current of 205 A at 25°C (Tc). This through-hole component, housed in a PG-TO220-3 package, offers a low on-resistance of 1.83 mOhm at 100 A and 10 V. With a gate charge (Qg) of 210 nC at 10 V and input capacitance (Ciss) of 16000 pF at 50 V, it is suitable for demanding power applications. The device boasts a maximum power dissipation of 375 W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Applications include industrial power supplies, automotive systems, and electric vehicle charging infrastructure.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 205A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.83mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 270µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 50 V |
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