IPP018N10N5AKSA1
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 5 IPP018N10N5AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 33 A at 25°C ambient and 205 A at 25°C case temperature. The low on-resistance, specified as 1.83 mOhm maximum at 100 A and 10 V gate-source voltage, contributes to minimized conduction losses. With a gate charge (Qg) of 210 nC maximum at 10 V, switching characteristics are optimized for demanding power systems. The component exhibits a power dissipation capability of 3.8 W (Ta) and 375 W (Tc), ensuring robust thermal management. Operating across a wide temperature range of -55°C to 175°C, the IPP018N10N5AKSA1 is suitable for use in automotive, industrial power supplies, and motor control applications. This through-hole mounted device is supplied in a PG-TO220-3 package.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 205A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.83mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 270µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 50 V |
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