IPP015N04NGXKSA1
MOSFET N-CH 40V 120A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPP015N04NGXKSA1 is an N-channel Power MOSFET from the OptiMOS™ series. This component features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) capability of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The device offers a low on-resistance (Rds On) of 1.5mOhm at 100A and 10V drive voltage. Key parameters include a gate charge (Qg) of 250 nC @ 10V and input capacitance (Ciss) of 20000 pF @ 20V. It operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO220-3-1 package, suitable for through-hole mounting. This MOSFET is utilized in applications such as automotive power management and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF @ 20 V |
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