IPP014N06NF2SAKMA1
TRENCH 40<-<100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™2 N-Channel Power MOSFET, part number IPP014N06NF2SAKMA1, offers a 60V drain-source voltage and a continuous drain current of 198A at 25°C case temperature. This through-hole component features a low on-resistance of 1.4mOhm at 100A and 10V Vgs, with a maximum gate charge of 305nC at 10V. The MOSFET is designed for efficient power handling, achieving a maximum power dissipation of 300W (Tc) and 3.8W (Ta) within its TO-220-3 package. Operating temperature range is -55°C to 175°C. This device is suitable for demanding applications across various industrial sectors, including automotive, power supplies, and motor control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: StrongIRFET™2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 198A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Vgs(th) (Max) @ Id | 3.3V @ 246µA |
| Supplier Device Package | PG-TO220-3-U05 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 305 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 30 V |
Request a Quote
Clients Also Buy
IPD029N04NF2SATMA1
TRENCH <= 40V
IPD028N06NF2SATMA1
TRENCH 40<-<100V
IPD023N04NF2SATMA1
TRENCH <= 40V
