IPN80R3K3P7ATMA1
MOSFET N-CH 800V 1.9A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 800 V 1.9A (Tc) 6.1W (Tc) Surface Mount PG-SOT223
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.1W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 500 V |
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