IPN80R2K0P7ATMA1
MOSFET N-CHANNEL 800V 3A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPN80R2K0P7ATMA1, offers exceptional performance for demanding applications. This 800V device features a maximum continuous drain current of 3A at 25°C (Tc) and a low on-resistance of 2Ohm at 940mA, 10V. With a typical gate charge of 9nC at 10V and input capacitance of 175pF at 500V, it is optimized for high-frequency switching. The PG-SOT223 package facilitates surface mounting, suitable for power supply designs and high-voltage conversion circuits across various industrial and consumer electronics sectors. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 940mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.4W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 50µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 500 V |
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