IPN70R2K1CEATMA1
MOSFET N-CHANNEL 700V 4A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPN70R2K1CEATMA1 is a 700V N-Channel Power MOSFET designed for demanding applications. This device features a low on-resistance of 2.1Ohm maximum at 1A, 10V drain current and gate-source voltage, facilitating efficient power delivery. With a continuous drain current rating of 4A at 25°C and a maximum power dissipation of 5W, it offers robust performance in a compact PG-SOT223-3 package. The MOSFET boasts a gate charge of 7.8 nC maximum at 10V and an input capacitance of 163 pF maximum at 100V, enabling fast switching characteristics. Operating temperature ranges from -40°C to 150°C. This component is commonly utilized in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 70µA |
| Supplier Device Package | PG-SOT223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 163 pF @ 100 V |
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