IPN70R1K2P7SATMA1
MOSFET N-CH 700V 4.5A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies CoolMOS™ P7 series IPN70R1K2P7SATMA1 is a 700V N-Channel power MOSFET designed for high-performance applications. This component features a maximum continuous drain current of 4.5A (Tc) and a maximum Rds(on) of 1.2 Ohm at 900mA and 10V. The PG-SOT223 package offers a surface mount solution with a maximum power dissipation of 6.3W (Tc). Key electrical characteristics include a gate charge of 4.8 nC @ 10V and an input capacitance of 174 pF @ 400V. This device is suitable for use in switched-mode power supplies, server power, industrial power, and lighting applications. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.3W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 400 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
