IPN70R1K0CEATMA1
MOSFET N-CH 700V 7.4A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPN70R1K0CEATMA1 is a 700V N-Channel Power MOSFET designed for demanding applications. This device offers a continuous drain current of 7.4A at 25°C with a maximum power dissipation of 5W. The low on-resistance of 1 Ohm is achieved at 1.5A and 10V gate drive. Key parameters include a gate charge of 14.9 nC and input capacitance of 328 pF at 100V. The MOSFET is housed in a PG-SOT223 package (TO-261-4, TO-261AA) suitable for surface mounting. Operating temperature range is -40°C to 150°C. This component is frequently specified in power factor correction, switch-mode power supplies, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
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