IPN65R1K5CEATMA1
MOSFET N-CH 650V 5.2A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPN65R1K5CEATMA1, an N-Channel CoolMOS™ CE series power MOSFET. This surface mount component, housed in a PG-SOT223 package (TO-261-4, TO-261AA), offers a 650V drain-to-source voltage (Vdss) and 5.2A continuous drain current (Id) capability. With a maximum on-resistance (Rds On) of 1.5 Ohm at 1A and 10V gate-source voltage, it is designed for efficient power conversion. Key parameters include a gate charge (Qg) of 10.5 nC at 10V and input capacitance (Ciss) of 225 pF at 100V. The device supports a maximum power dissipation of 5W (Tc) and operates across a temperature range of -40°C to 150°C. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
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