IPN60R600P7SATMA1
MOSFET N-CHANNEL 600V 6A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series IPN60R600P7SATMA1 is a 600V N-channel power MOSFET designed for demanding applications. This device features a low Rds(on) of 600mOhm at 1.7A and 10V, with a continuous drain current of 6A at 25°C. The IPN60R600P7SATMA1 offers a maximum power dissipation of 7W in its PG-SOT223 package. Key electrical characteristics include a gate charge of 9 nC at 10V and an input capacitance of 363 pF at 400V. The device operates reliably within a temperature range of -40°C to 150°C. This MOSFET is suitable for use in power supply units, server power, industrial power supplies, and renewable energy systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 400 V |
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