IPN50R950CEATMA1
MOSFET N-CH 500V 6.6A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series IPN50R950CEATMA1 is a 500V N-channel Power MOSFET. This device features an Rds(on) of 950mOhm at 1.2A and 13V, with a continuous drain current capability of 6.6A (Tc). The maximum power dissipation is 5W (Tc), and it operates within a temperature range of -40°C to 150°C (TJ). Key parameters include a gate charge of 10.5 nC (max) at 10V and an input capacitance of 231 pF (max) at 100V. The IPN50R950CEATMA1 is housed in a PG-SOT223 package (TO-261-4, TO-261AA) for surface mounting and is supplied on tape and reel. This component is well-suited for applications in power supply units, lighting, and consumer electronics.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 231 pF @ 100 V |
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