IPN50R800CEATMA1
MOSFET N-CH 500V 7.6A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPN50R800CEATMA1 is a 500V N-channel CoolMOS™ CE series power MOSFET. This surface mount device, packaged in a PG-SOT223 (TO-261-4, TO-261AA) case, offers a continuous drain current of 7.6A at 25°C (Tc) with a maximum power dissipation of 5W (Tc). Key parameters include a drain-to-source breakdown voltage (Vdss) of 500V and a typical Rds(on) of 800mOhm at 1.5A and 13V gate drive. The device features a gate charge (Qg) of 12.4 nC at 10V and input capacitance (Ciss) of 280 pF at 100V. Operating temperature ranges from -40°C to 150°C (TJ). This component is suitable for applications in power supplies, lighting, and industrial power systems.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.5A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-SOT223 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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