IPN50R650CEATMA1
MOSFET N-CH 500V 9A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel Power MOSFET, part number IPN50R650CEATMA1. This device features a 500 V drain-source voltage and a continuous drain current of 9 A at 25°C (Tc). The Rds(on) is specified at a maximum of 650 mOhm at 1.8 A and 13 V gate-source voltage. Designed for surface mounting in a PG-SOT223-3 (TO-261-4, TO-261AA) package, it offers a maximum power dissipation of 5 W (Tc). Key parameters include a gate charge (Qg) of 15 nC at 10 V and input capacitance (Ciss) of 342 pF at 100 V. This component is suitable for applications in power supply units and industrial power systems. It operates within a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 1.8A, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-SOT223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 342 pF @ 100 V |
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