IPN50R3K0CEATMA1
MOSFET N-CH 500V 2.6A SOT223Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel power MOSFET, IPN50R3K0CEATMA1, offers 500V drain-source breakdown voltage and a continuous drain current of 2.6A at 25°C (Tc). This device features a maximum on-resistance of 3Ohm at 400mA and 13V gate-source voltage. The PG-SOT223-3 package facilitates surface mounting, providing a maximum power dissipation of 5W (Tc). Key parameters include a typical gate charge of 4.3nC at 10V and input capacitance of 84pF at 100V. The operating temperature range is -40°C to 150°C (TJ). This component is suitable for applications in power supplies and industrial power systems.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 400mA, 13V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Supplier Device Package | PG-SOT223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 13V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 84 pF @ 100 V |
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