IPLU300N04S4R7XTMA2
MOSFET N-CH 40V 300A 8HSOFManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPLU300N04S4R7XTMA2 is a 40V N-Channel Power MOSFET. This device features an extremely low on-resistance of 0.76mOhm at 100A and 10V gate drive, with a continuous drain current capability of 300A at 25°C (Tc). The maximum power dissipation is rated at 429W (Tc). Key parameters include a gate charge (Qg) of 287 nC at 10V and input capacitance (Ciss) of 22945 pF at 25V. It is packaged in an 8-PowerSFN (PG-HSOF-8-1) for surface mounting and supplied on tape and reel. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for high-power density applications across automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.76mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 287 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22945 pF @ 25 V |
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