IPL65R660E6AUMA1
MOSFET N-CH 650V 7A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPL65R660E6AUMA1. This 650V device features a low Rds(on) of 660mOhm at 2.1A and 10V Vgs, enabling high efficiency in power conversion applications. With a continuous drain current of 7A (Tc) and maximum power dissipation of 63W (Tc), it is suitable for demanding designs. The device utilizes a PG-VSON-4 (4-PowerTSFN) surface mount package, optimized for thermal performance. Key parameters include a Ciss of 440pF (max) at 100V and Qg of 23nC at 10V. This MOSFET is commonly employed in power supplies, server power, and industrial applications. Operating temperature ranges from -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ E6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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