IPL65R650C6SATMA1
MOSFET N-CH 650V 6.7A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPL65R650C6SATMA1 is a CoolMOS™ C6 series N-channel power MOSFET. This surface mount device, housed in a PG-TSON-8-2 package, offers a 650V drain-source voltage rating. It features a continuous drain current capability of 6.7A at 25°C (Tc) and a maximum power dissipation of 56.8W (Tc). The Rds(on) is specified at 650mOhm maximum at 2.1A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 21nC maximum at 10V and input capacitance (Ciss) of 440pF maximum at 100V. This component is suitable for applications in power factor correction, switch-mode power supplies, and solar inverters. The device operates within an extended temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TSON-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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