IPL65R460CFDAUMA1
MOSFET N-CH 650V 8.3A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPL65R460CFDAUMA1 is an N-Channel CoolMOS™ MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 8.3 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 460 mOhm at 3.4 A and 10 V gate-source voltage. With a power dissipation of 83.3 W (Tc), it is suitable for demanding power conversion tasks. The PG-VSON-4 package, also known as THIN-PAK, is a surface mount solution. Key electrical parameters include a gate charge (Qg) of 31.5 nC at 10 V and an input capacitance (Ciss) of 870 pF at 100 V. This MOSFET is utilized in various industries, including industrial power supplies and consumer electronics. It operates within a temperature range of -40°C to 150°C (TJ) and is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 300µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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