IPL65R420E6AUMA1
MOSFET N-CH 650V 10.1A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series N-Channel Power MOSFET, part number IPL65R420E6AUMA1, offers a 650V drain-source voltage and 10.1A continuous drain current at 25°C (Tc). This device features a maximum on-resistance of 420mOhm at 3.4A and 10V Vgs, with a gate charge of 39nC at 10V. The input capacitance (Ciss) is specified at a maximum of 710pF at 100V.
Designed for efficient power conversion, the IPL65R420E6AUMA1 operates within a temperature range of -40°C to 150°C (TJ). Its PG-VSON-4 package, also known as PG-VSON-4, is suitable for surface mount applications and is supplied on tape and reel. The maximum power dissipation is rated at 83W (Tc). This component is widely utilized in power supply units, adapter applications, and server power systems, where high voltage handling and low conduction losses are critical.
Additional Information
Series: CoolMOS™ E6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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