IPL65R340CFDAUMA2
MOSFET N-CH 650V 10.9A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CFD2 series N-channel power MOSFET, part number IPL65R340CFDAUMA2. This 650 V device offers a continuous drain current of 10.9 A (Tc) and a maximum power dissipation of 104.2 W (Tc). Featuring a low on-resistance of 340 mOhm at 4.4 A and 10 V, it utilizes a PG-VSON-4 package for surface mounting. Key parameters include a gate charge of 41 nC at 10 V and input capacitance of 1100 pF at 100 V. Ideal for high-frequency power conversion, this MOSFET is employed in applications such as server power supplies, consumer electronics, and industrial power systems. It operates within an ambient temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CFD2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 400µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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