IPL65R340CFDAUMA1
MOSFET N-CH 650V 10.9A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPL65R340CFDAUMA1 is a CoolMOS™ N-channel power MOSFET designed for high-voltage applications. This device features a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.9 A at 25°C (Tc). Optimized for efficiency, it offers a maximum Rds(on) of 340 mOhm at 4.4 A and 10 V gate drive. The device exhibits a gate charge (Qg) of 41 nC at 10 V and an input capacitance (Ciss) of 1100 pF at 100 V. With a maximum power dissipation of 104.2 W (Tc), it supports operation across a wide temperature range from -40°C to 150°C (TJ). Supplied in a PG-VSON-4 package, it is available on tape and reel (TR). This component is suitable for demanding power conversion circuits in industrial and consumer electronics.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 400µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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