IPL65R310E6AUMA1
MOSFET N-CH 650V 13.1A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ E6 series IPL65R310E6AUMA1 is a 650V N-Channel Power MOSFET. It features a maximum continuous drain current of 13.1A at 25°C and a continuous drain current of 8.2A at 100°C, with a power dissipation of 104W at 25°C. The device offers a low on-resistance of 310mOhm at 4.4A and 10V, and a gate charge of 45nC at 10V. Input capacitance (Ciss) is specified at a maximum of 950pF at 100V. This surface mount component, packaged in a PG-VSON-4 (4-PowerTSFN), operates within a temperature range of -40°C to 150°C. It is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and server power.
Additional Information
Series: CoolMOS™ E6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 400µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
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