IPL65R210CFDAUMA1
MOSFET N-CH 650V 16.6A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ MOSFET N-Channel, IPL65R210CFDAUMA1, is a 650 V device featuring a low Rds(on) of 210 mOhm at 7.3A and 10V Vgs. This PG-VSON-4 packaged component offers a continuous drain current of 16.6A (Tc) and a maximum power dissipation of 151W (Tc). Key parameters include a gate charge of 68 nC @ 10V and an input capacitance of 1850 pF @ 100V. Designed for surface mounting, this N-Channel MOSFET operates across a temperature range of -40°C to 150°C (TJ). The IPL65R210CFDAUMA1 is suitable for applications in power factor correction, switched-mode power supplies, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 700µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |
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