IPL65R1K0C6SATMA1
MOSFET N-CH 650V 4.2A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPL65R1K0C6SATMA1 is an N-Channel CoolMOS™ C6 series power MOSFET. This device features a 650V drain-source breakdown voltage and a continuous drain current capability of 4.2A at 25°C (Tc), with a maximum power dissipation of 34.7W (Tc). The on-resistance (Rds On) is specified at 1 Ohm maximum for 1.5A and 10V Vgs. The device is housed in a PG-TSON-8-2 package (8-PowerTDFN) and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 15 nC maximum at 10V Vgs and input capacitance (Ciss) of 328 pF maximum at 100V Vds. This component is suitable for applications in power factor correction (PFC), switch-mode power supplies (SMPS), and server power.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34.7W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TSON-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
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