IPL65R190E6AUMA1
MOSFET N-CH 650V 20.2A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ E6 series N-channel power MOSFET, part number IPL65R190E6AUMA1, offers a 650 V breakdown voltage and a continuous drain current of 20.2 A at 25°C (Tc). This surface mount device features a low on-resistance of 190 mOhm maximum at 7.3 A and 10 V, with a maximum power dissipation of 151 W (Tc). The unit is housed in a PG-VSON-4 package, also known as 4-PowerTSFN, and is supplied on tape and reel. Key parameters include a gate charge of 73 nC maximum at 10 V and an input capacitance of 1620 pF maximum at 100 V. The IPL65R190E6AUMA1 is suitable for applications in power factor correction, switch mode power supplies, and server power supplies.
Additional Information
Series: CoolMOS™ E6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 700µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
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