IPL60R650P6SATMA1
MOSFET N-CH 600V 6.7A 8THINPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPL60R650P6SATMA1 is a CoolMOS™ P6 series N-Channel Power MOSFET designed for high-performance applications. This device features a 600 V drain-source voltage and a continuous drain current of 6.7 A at 25°C (Tc), with a maximum power dissipation of 56.8 W (Tc). The low on-resistance is specified as 650 mOhm at 2.4 A and 10 V gate-source voltage.
Key parameters include a gate charge of 12 nC @ 10 V and input capacitance of 557 pF @ 100 V. The MOSFET is housed in an 8-ThinPak (5x6) surface mount package, supplied on tape and reel. Operating temperature range is -40°C to 150°C (TJ). This component is suitable for use in power supply units, solar inverters, and industrial motor drives.
Additional Information
Series: CoolMOS™ P6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Supplier Device Package | 8-ThinPak (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 557 pF @ 100 V |
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