IPL60R385CPAUMA1
MOSFET N-CH 600V 9A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPL60R385CPAUMA1, offers a 600V drain-source voltage with a continuous drain current capability of 9A at 25°C. This surface mount device features a low on-resistance of 385mOhm at 5.2A and 10V gate-source voltage. The PG-VSON-4 package facilitates efficient thermal management, with a maximum power dissipation of 83W (Tc). Key parameters include a gate charge (Qg) of 17 nC at 10V and input capacitance (Ciss) of 790 pF at 100V. This component is suitable for applications in power supplies, server and telecom power, and industrial power systems.
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 340µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 100 V |
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