IPL60R2K1C6SATMA1
MOSFET N-CH 600V 2.3A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ C6 series N-Channel Power MOSFET, part number IPL60R2K1C6SATMA1. This device features a 600 V breakdown voltage and 2.3 A continuous drain current at a case temperature of 25°C. The Rds(on) is specified at a maximum of 2.1 Ohms with a gate-source voltage of 10V and a drain current of 760mA. Key parameters include a maximum power dissipation of 21.6 W (Tc), a gate charge of 6.7 nC at 10V, and input capacitance (Ciss) of 140 pF at 100V. The MOSFET is housed in a PG-TSON-8-2 (8-PowerTDFN) surface mount package, delivered on tape and reel. This component is suitable for applications in power supply units and lighting.
Additional Information
Series: CoolMOS™ C6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 760mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 21.6W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Supplier Device Package | PG-TSON-8-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 100 V |
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