IPL60R299CPAUMA1
MOSFET N-CH 600V 11.1A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPL60R299CPAUMA1 is a 600V N-Channel CoolMOS™ CP series power MOSFET in a PG-VSON-4 package. This surface mount device features a low Rds(on) of 299mOhm at 6.6A and 10V, and a continuous drain current of 11.1A at 25°C (Tc). With a maximum power dissipation of 96W (Tc) and a gate charge of 22 nC at 10V, this MOSFET is suitable for demanding applications. It operates across a temperature range of -40°C to 150°C (TJ). The IPL60R299CPAUMA1 finds application in power supply units, server power, industrial power supplies, and lighting.
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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