IPL60R255P6AUMA1
MOSFET N-CH 600V 15.9A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P6 series N-Channel Power MOSFET, part number IPL60R255P6AUMA1, is designed for high-performance applications. This device features a 600V drain-source breakdown voltage and a continuous drain current capability of 15.9A at 25°C (Tc). With a maximum on-resistance of 255mOhm at 6.4A and 10V gate drive, it offers efficient power switching. The IPL60R255P6AUMA1 is housed in a compact PG-VSON-4 (4-PowerTSFN) surface mount package, enabling high power density. Key parameters include a gate charge of 31 nC at 10V and an input capacitance of 1450 pF at 100V. This component is suitable for use in power factor correction, switch mode power supplies, and solar inverters. It operates across a wide temperature range from -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ P6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 255mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 126W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 530µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 100 V |
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