IPL60R225CFD7AUMA1
MOSFET N-CH 600V 12A VSON-4Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CFD7 series N-Channel Power MOSFET, part number IPL60R225CFD7AUMA1, offers a 600V breakdown voltage and a continuous drain current of 12A (Tc) at 25°C. This device features a low on-resistance of 225mOhm maximum at 4.9A, 10V, and a gate charge of 23nC maximum at 10V. The input capacitance (Ciss) is 1015pF maximum at 400V. Designed for surface mounting, it utilizes the PG-VSON-4-1 package. With a maximum power dissipation of 68W (Tc) and an operating temperature range of -40°C to 150°C (TJ), this MOSFET is suitable for applications in power factor correction, server and telecom power supplies, and industrial power systems.
Additional Information
Series: CoolMOS™ CFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 240µA |
| Supplier Device Package | PG-VSON-4-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 400 V |
Request a Quote
Clients Also Buy
IPB60R040CFD7ATMA1
MOSFET N-CH 600V 50A TO263-3
IPL60R060CFD7AUMA1
MOSFET N CH
IPW60R070CFD7XKSA1
MOSFET N-CH 650V 31A TO247-3
