IPL60R1K5C6SATMA1
MOSFET N-CH 600V 3A THIN-PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ C6 series N-channel power MOSFET, part number IPL60R1K5C6SATMA1, offers a 600V drain-source voltage (Vdss) and 3A continuous drain current at 25°C (Tc). This surface mount device features an Rds(on) of 1.5 Ohm maximum at 1.1A and 10V Vgs, with a gate charge (Qg) of 9.4 nC maximum at 10V. Input capacitance (Ciss) is rated at 200 pF maximum at 100V. The component is housed in an 8-ThinPak (5x6) package, supplied on tape and reel. Maximum power dissipation is 26.6W (Tc). This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching. It operates across a junction temperature range of -40°C to 150°C.
Additional Information
Series: CoolMOS™ C6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26.6W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | 8-ThinPak (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 100 V |
Request a Quote
Clients Also Buy
IPD60R3K3C6ATMA1
MOSFET N-CH 600V 1.7A TO252-3
IPD65R1K4C6ATMA1
MOSFET N-CH 650V 3.2A TO252-3
IPD60R950C6ATMA1
MOSFET N-CH 600V 4.4A TO252-3
