IPL60R199CPAUMA1
MOSFET N-CH 600V 16.4A 4VSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CP series N-Channel Power MOSFET, part number IPL60R199CPAUMA1, offers a 600 V drain-source breakdown voltage and a continuous drain current capability of 16.4 A at 25°C (Tc). This device features a low on-resistance of 199 mOhm at 9.9 A and 10 V Vgs, with a gate charge of 32 nC (max) at 10 V. The IPL60R199CPAUMA1 is housed in a compact PG-VSON-4 (4-PowerTSFN) surface mount package, designed for efficient thermal management with a maximum power dissipation of 139 W (Tc). Its robust construction and high voltage rating make it suitable for applications in power factor correction, switch-mode power supplies, and general-purpose high voltage switching across various industrial sectors. The operating junction temperature range is from -40°C to 150°C.
Additional Information
Series: CoolMOS™ CPRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Supplier Device Package | PG-VSON-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V |
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