IPI90R800C3XKSA1
MOSFET N-CH 900V 6.9A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPI90R800C3XKSA1 is a CoolMOS™ N-Channel power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 6.9A at 25°C. With a low on-resistance (Rds On) of 800mOhm at 4.1A and 10V Vgs, it offers efficient power handling up to 104W. The device is housed in a PG-TO262-3 package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 42 nC at 10V and input capacitance (Ciss) of 1100 pF at 100V. This MOSFET is utilized in power supply units, server power, industrial power supplies, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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