IPI90R800C3
MOSFET N-CH 900V 6.9A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI90R800C3. This device features a maximum drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 6.9 A at 25°C (Tc). The Rds On is specified at a maximum of 800 mOhm with a gate-source voltage (Vgs) of 10 V and a drain current (Id) of 4.1 A. Key characteristics include a gate charge (Qg) of 42 nC (max) at 10 V and input capacitance (Ciss) of 1100 pF (max) at 100 V. The device offers a maximum power dissipation of 104 W (Tc) and is housed in a PG-TO262-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This component is utilized in applications within the industrial and power supply sectors.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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