IPI90R340C3XKSA1
MOSFET N-CH 900V 15A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET designed for high-voltage applications. The IPI90R340C3XKSA1 features a Drain-to-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 15A at 25°C. With a low on-resistance (Rds On) of 340mOhm at 9.2A and 10V Vgs, this device offers efficient power switching. Key parameters include a maximum power dissipation of 208W (Tc) and a gate charge (Qg) of 94 nC at 10V. The input capacitance (Ciss) is 2400 pF at 100V. Packaged in a PG-TO262-3 (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). Its robust design makes it suitable for use in power supplies, solar inverters, and industrial applications requiring high voltage and efficiency.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 9.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 100 V |
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