IPI90R1K2C3XKSA2
MOSFET N-CH 900V 5.1A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPI90R1K2C3XKSA2. This TO-262-3 packaged device features a 900V drain-source breakdown voltage and a continuous drain current of 5.1A at 25°C (Tc). With a maximum on-resistance of 1.2 Ohm at 2.8A and 10V Vgs, it offers efficient power handling. Key parameters include a gate charge of 28 nC at 10V and input capacitance of 710 pF at 100V. The component is rated for 83W power dissipation (Tc) and an operating temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, industrial automation, and high-voltage conversion systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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