IPI90N06S404AKSA2
MOSFET N-CHANNEL_55/60VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPI90N06S404AKSA2, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). This device features a low on-resistance of 4mOhm at 90A and 10V Vgs, with a maximum power dissipation of 150W (Tc). The gate charge is specified at 128 nC maximum at 10V Vgs, and input capacitance (Ciss) is 10400 pF maximum at 25V Vds. With a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V at 90µA, this MOSFET is designed for demanding applications. It operates across a temperature range of -55°C to 175°C (TJ). The component utilizes TO-262-3 Long Leads, I2PAK, TO-262AA packaging and is supplied in a PG-TO262-3-1 package. Qualification to AEC-Q101 standards indicates suitability for automotive applications. This through-hole mounted component is manufactured using Metal Oxide technology.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 25 V |
| Qualification | AEC-Q101 |
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