IPI80P04P4L04AKSA1
MOSFET P-CH 40V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number IPI80P04P4L04AKSA1, offers a 40V drain-source voltage and 80A continuous drain current at 25°C. This AEC-Q101 qualified component features a low on-resistance of 4.7mOhm at 80A and 10V Vgs. With a maximum power dissipation of 125W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding applications. The MOSFET is housed in a PG-TO262-3-1 package. Key parameters include a gate charge of 176 nC at 10V, input capacitance of 3800 pF at 25V, and a threshold voltage of 2.2V at 250µA. This device is commonly utilized in automotive power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
